Anh-Tuan Pham

Anh-Tuan Pham BEng, MSc


Institute for Electronic Devices and Circuits
(Institut für Elektronische Bauelemente und Schaltungstechnik)
TU Braunschweig
Hans-Sommer-Str. 66, 14.OG
38106 Braunschweig

Room 1416
Tel.: +49 (531) 391-3168
Fax: +49 (531) 391-8189

E-Mail:

Education

1997 BEng, Electrical and Electronics Engineering, Polytechnics University of Ho Chi Minh City, Vietnam
2004 MSc, Communication and Information Technology, University of Bremen, Germany
(Master thesis: "Analysis of the Inversion Layer Subband Structure in p-Channel MOSFETs")

Awards and outstanding accomplishments

Career history

1997 - 2002 Telecommunication Department, Polytechnics University of Ho Chi Minh City, Vietnam
Sept - Nov 2003 Infineon Technologies AG, Munich, Germany
Since Sept 2004 Institute for Electronic Devices and Circuits, TU Braunschweig, Germany

Professional services

Reviewer for Journal of IEEE Transaction on Electron Devices, Journal of Microelectronic Engineering, Journal of Computational Electronics, Journal of Solid-State Electronics, Applied Physics Letters

Publication list

Journal articles

  1. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " TCAD ready density gradient calculation of channel charge for Strained Si/Strained Si_{1-x}Ge_x dual channel pMOSFETs on (001) Relaxed Si_{1-y}Ge_y " Journal of Computational Electronics, Vol. 3, pp. 193-197, 2004.

  2. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " Study of charge carrier quantization in strained Si-nMOSFETs " Materials Science in Semiconductor Processing, Vol. 8, pp. 363-366, 2005.

  3. A. T. Pham, C. D. Nguyen, C. Jungemann, B. Meinerzhagen: " A Semiempirical Surface Scattering Model for Quantum Corrected Full-Band Monte-Carlo Simulation of Biaxially Strained Si/SiGe NMOSFETs " Solid-State Electronics, Vol. 50, pp. 694-700, 2006.

  4. C. Jungemann, A. T. Pham, B. Meinerzhagen, C. Ringhofer, M. Bollhoefer: " Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle " Journal of Appl. Phys. 100, 024502, 2006.

  5. A. T. Pham, C. Jungemann, C. D. Nguyen, B. Meinerzhagen: " A Semiempirical Surface Scattering Model for Quantum Corrected Monte-Carlo Simulation of Unstrained Si and Strained Si/SiGe PMOSFETs " Materials Science and Engineering B, Vol. 135, pp. 224-227, 2006.

  6. C. Jungemann, A. T. Pham, B. Meinerzhagen: " A Linear Response Monte Carlo Algorithm for Inversion Layers and Magnetotransport " Journal of Computational Electronics, Vol. 5 (4), pp. 411-414, 2006.

  7. T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersboeck, S. Selberherr, A. T. Pham, B. Meinerzhagen, P. Wong, Y. Nishi, K. C. Saraswat: " High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs " Microelectronic Engineering, Vol. 84, pp. 2063-2066, 2007.

  8. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Physics-based modeling of hole inversion layer mobility in strained SiGe on insulator " IEEE Trans. on Electron Devices, Vol. 54 (9), pp. 2174-2182, 2007.

  9. A. T. Pham, C. Jungemann, B. Meinerzhagen: " A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization " Journal of Computational Electronics, Vol. 7 (3), pp. 99-102, 2008.

  10. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates " Solid-State Electronics, Vol. 52, pp. 1437-1442, 2008.

  11. A. T. Pham, C. Jungemann, M. Klawitter, B. Meinerzhagen: " Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers " Solid-State Electronics, Vol. 52, pp. 1660-1668, 2008.

  12. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Modeling and validation of piezoresistive coefficients in Si hole inversion layers " Solid-State Electronics, Vol. 53, pp. 1325-1333, 2009.

  13. A. T. Pham, C. Jungemann, B. Meinerzhagen: " On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs " Journal of Computational Electronics, Vol. 8, pp. 242-266, 2009. (invited)

Conference proceedings
  1. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " Study of Charge Carrier Quantization in Strained Si-nMOSFETs " Proceedings of ISTDM, pp. 83-84, Frankfurt-Oder (Germany), 2004.

  2. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " TCAD ready density gradient calculation of channel charge for Strained Si/Strained Si_{1-x}Ge_x dual channel pMOSFETs on (001) Relaxed Si_{1-y}Ge_y " IWCE Abstracts, pp. 40-41, Purdue (USA), 2004.

  3. A. T. Pham, C. D. Nguyen, C. Jungemann, B. Meinerzhagen: " A Semiempirical Surface Scattering Model for Quantum Corrected Monte Carlo Simulation of Strained Si-nMOSFETs " Proceedings of ESSDERC, pp. 293-296, Grenoble (France), 2005.

  4. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " Surface Scattering Model for Quantum Corrected Monte Carlo Simulation of Strained Si-nMOSFETs " TECHCON Abstracts, pp. 157, Portland (USA), 2005.

  5. C. Jungemann, A. T. Pham, B. Meinerzhagen: " A Linear Response Monte Carlo Algorithm for Inversion Layers and Magnetotransport " IWCE, Vienna (Austria), May 2006.

  6. A. T. Pham, C. Jungemann, C. D. Nguyen, B. Meinerzhagen: " A Semiempirical Surface Scattering Model for Quantum Corrected Monte-Carlo Simulation of Strained Si PMOSFETs " E-MRS IUMRS ICEM 2006 Spring Meeting, Nice (France), May 2006.

  7. A. T. Pham, C. Jungemann, C. D. Nguyen, B. Meinerzhagen: " Semiempirical Surface Scattering Model for Quantum Corrected Full-Band Monte-Carlo Simulation of Strained Si PMOSFETs " IEEE EDS Workshop on Adv. Devices, Duisburg (Germany), June 2006.

  8. A. T. Pham, C. Jungemann, B. Meinerzhagen: " A Full-Band Spherical Harmonics Expansion of the Valence Bands up to High Energies " Proceedings of IEEE SISPAD, pp. 322-325, Monterey (USA), 2006.

  9. T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersboeck, S. Selberherr, A. T. Pham, B. Meinerzhagen, P. Wong, Y. Nishi, K. C. Saraswat: " High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs " INFOS, Athens (Greece), 2007.

  10. T. Krishnamohan, D. Kim, C. Jungemann, A. T. Pham, B. Meinerzhagen, Y. Nishi, K. C. Saraswat: " High Performance Strained Germanium Heterostructure FETs " Proceedings of IEEE SISPAD, pp. 21-24, Vienna (Austria), 2007.

  11. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Simulation of magnetotransport in hole inversion layers based on full subbands " Proceedings of IEEE SISPAD, pp. 193-196, Vienna (Austria), 2007.

  12. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates " Proceedings of IEEE ESSDERC, pp. 390-393, Munich (Germany), 2007.

  13. A. T. Pham, C. Jungemann, B. Meinerzhagen: " A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization " Proceedings of IWCE-12, Amherst (USA), 2007.

  14. A. T. Pham, C. Jungemann, M. Klawitter, B. Meinerzhagen: " Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers " International Semiconductor Device Research Symposium (ISDRS), University of Maryland - College Park (USA), 2007. (nominated for the Best Student Paper Award)

  15. T. Krishnamohan, A. T. Pham, C. Jungemann, B. Meinerzhagen, K. Saraswat: " Mobility Modeling in Ultra-Thin (UT) Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs " SiGe and Ge; Processing, and Devices Symposium, Honolulu, Hawaii (USA), 2008.

  16. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Deterministic multisubband device simulations for strained double gate PMOSFETs including magnetotransport " IEDM Tech. Dig., pp. 895-898, San Francisco, CA (USA), 2008.

  17. T. Krishnamohan, D. Kim, T. V. Dinh, A. T. Pham, B. Meinerzhagen, C. Jungemann, K. Saraswat: " Comparison of (001), (110) and (111) Uniaxial- and Biaxial- Strained-Ge and Strained-Si PMOS DGFETs for All Channel orientations: Mobility Enhancement, Drive Current, Delay and Off-State Leakage " IEDM Tech. Dig., pp. 899-902, San Francisco, CA (USA), 2008.

  18. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Modeling of piezoresistive coefficients in Si hole inversion layers " Proceedings of ULIS, Aachen (Germany), 2009.

  19. B. Meinerzhagen, A. T. Pham, C. Jungemann: " Predictive TCAD support for NanoMOS compact model development " 11. Workshop on Analog Circuit, Hannover (Germany), 2009.

  20. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Simulation of mobility variation and drift velocity enhancement due to uniaxial stress combined with biaxial strain in Si PMOS " Proceedings of IWCE-13, pp. 45-48, Beijing (China), 2009.

  21. A. T. Pham, C. Jungemann, B. Meinerzhagen: " A convergence enhancement method for deterministic multisubband device simulations of double gate PMOSFET " Proceedings of SISPAD, pp. 115-118, San Diego, CA (USA), 2009.

Last modification: 8 Feb 2010

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