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Bücher


  1. C. Jungemann, B. Meinerzhagen: "Hierarchical Device Simulation (The Monte-Carlo Perspective)", Springer Verlag: Wien, New York, 2003.


  2. C. Jungemann, B. Neinhüs, B. Meinerzhagen: "Hydrodynamic Modeling of RF Noise for Silicon-Based Devices" in "ADVANCED DEVICE MODELING AND SIMULATION" , Editor: T. Grasser, World Scientific Publishing Co., 2003.


  3. S. M. Hong, A. T. Pham, C. Jungemann: " Deterministic Solvers for the Boltzmann Transport Equation", Springer Verlag: Wien, New York, 2011.


  4. B. Meinerzhagen: "Verantwortung in der Lehre. Zwei Fallbeispiele" in: L. Hieber, H.-U. Kammeyer (Hrsg.): "Verantwortung von Ingenieurinnen und Ingenieuren", Wiesbaden: Springer VS , 2014.


  5. B. Meinerzhagen: "Die radikale Reduzierung der mathematischen Grundlagenlehre vor dem Abitur und die daraus resultierenden Folgen für die Ingenieursausbildung an den Universitäten" in: S. Schaede (Hrsg.): " Mathematik in den MINT-Studiengängen im norddeutschen Raum - Herausforderungen und Lösungsansätze am Übergang von der Schule zur Hochschule ", Loccumer Protokoll 68/15, Rehburg-Loccum, 2016.


Dissertationen


  1. C. Jungemann: "Methoden zur Simulation hochenergetischer Elektronen in Ultrakurzkanaltransistoren", Doktorarbeit, RWTH Aachen, 1995. Aachen: Verlag Shaker


  2. F. M. Bufler: "Full-Band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe", Doktorarbeit, Universität Bremen, 1998, Verlag: Herbert Utz Verlag. Abstract


  3. P. Graf: "Entwicklung eines Monte-Carlo-Bauelementsimulators für Si/SiGe-Heterobipolartransistoren", Doktorarbeit, Universität Bremen, 1999, Verlag: Herbert Utz Verlag


  4. S. Keith: "Full-Band Monte Carlo Simulation von Si/SiGe-Hetero-Feldeffekttransistoren ", Doktorarbeit, Universität Bremen, 2000, Verlag Shaker


  5. S. Decker: "Numerische Simulation von Si/SiGe-Hochfrequenztransistoren unter Berücksichtigung des elektronischen Rauschens ", Doktorarbeit, Universität Bremen, 2001, Verlag Shaker


  6. B. Neinhüs: "Hierarchische Bauelementsimulation von Si/SiGe-Hochfrequenztransistoren ", Doktorarbeit, Universität Bremen, 2003, Logos-Verlag


  7. J. Schmitz: "Systematische Verfahren zur Topologiegeneration für den Entwurf elektronischer Transkonduktanzschaltungen ", Doktorarbeit, Technische Universität Carolo-Wilhelmina zu Braunschweig, 2005, Verlag Shaker


  8. C. D. Nguyen: "Semiklassische Modellierung des Ladungstransports in Inversionsschichten für Sub-100 nm-SiGe-CMOS-Transistoren ", Doktorarbeit, Technische Universität Carolo-Wilhelmina zu Braunschweig, 2006, Logos-Verlag


  9. M. Hinz: "Neue Methoden zur Verhaltensmodellierung und Charakterisierung eines analog/digital-Systems am Beispiel einer Phasenregelschleife", Doktorarbeit, Technische Universität Carolo-Wilhelmina zu Braunschweig, 2008, TUDpress Verlag der Wissenschaften Dresden


  10. A. T. Pham: "Efficient and predictive deterministic multisubband device simulations for strained nanoscale PMOSFETs", Doktorarbeit, Technische Universität Carolo-Wilhelmina zu Braunschweig, 2010


  11. J. Dang: "Design and Characterization of K-Band Receiver Front-End Integrated Circuits in 130 nm CMOS", Doktorarbeit, Technische Universität Carolo-Wilhelmina zu Braunschweig, 2015



Journalartikel


  1. K. H. Bach, H. K. Dirks, B. Meinerzhagen, W. L. Engl: "A new nonlinear relaxation scheme for solving semiconductor device equations" , IEEE Trans. Computer-Aided Des., 10, 1175-1186, 1991.


  2. R. Thoma, A. Emunds, B. Meinerzhagen, H. J. Peifer, W. L. Engl: "Hydrodynamic equations for semiconductors with nonparabolic bandstructures" , IEEE Trans. Electron Devices, 38, 1343-1352, 1991.


  3. K. Fukuda, H.-J. Peifer, B. Meinerzhagen, R. Thoma, W. L. Engl: "New efficient treatment of impact ionization in submicron metal-oxide-semiconductor field-effect transistors", Jpn. J. Appl. Phys., 31(12A), 3763-3769, 1992.


  4. C. Jungemann, A. Emunds, W. L. Engl: "Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers" , Solid-State Electron., 36, 1529-1540, 1993.


  5. A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessenne, P. Dollfus, R. Dutton, W. L. Engl, R. Fauquembergue, C. Fiegna, M. V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J. M. Higman, T. Iizuka, C. Jungemann, Y.Kamakura, H. Kosina, T. Kunukiyo, S. E. Laux, H. Lin, C. Maziar, H. Mizuno, H. J. Peifer, S. Ramaswamy, N. Sano, P. G. Scrobohaci, S. Selberherr, M. Takenaka, T. Tang, J. L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S. Wang, X. Wang, C.Yao, P. D. Yoder, A. Yoshii: "A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon" , IEEE Trans. Electron Devices, 41, 1646-1654, 1994.


  6. M. Stecher, B. Meinerzhagen, I. Bork, J. M. J. Krücken, P. Maas, W. L. Engl: "Influence of energy transport related effects on NPN BJT device performance and ECL gate delay analysed by 2D parallel mixed level device/circuit simulation", IECE Trans. on Electronics, E77-C(2), 200-205, 1994.


  7. C. Jungemann, S. Keith, F. M. Bufler, B. Meinerzhagen: "Effects of band structure and phonon models on hot electron transport in silicon" , Electrical Engineering, 79, 99-101, 1996.


  8. C. Jungemann, R. Thoma, W. L. Engl: "A soft threshold lucky electron model for efficient and accurate numerical device simulation" , Solid-State Electron., 39, 1079-1086, 1996.


  9. C. Jungemann, S. Yamaguchi, H. Goto: "On the accuracy and efficiency of substrate current calculations for sub-µm n-MOSFET's" , IEEE Electron Device Lett., 17, 464-466, 1996.


  10. C. Jungemann, S. Decker, R. Thoma, W.-L. Engl, H. Goto: "Phase space multiple refresh: a general purpose statistical enhancement technique for Monte Carlo device simulation", IEEE J. Techno. Comp. Aided Design, (2), 1997.


  11. F. M. Bufler, P. Graf, B. Meinerzhagen, B. Adeline, M. M. Rieger, H. Kibbel, G. Fischer: "Analysis of electron transport properties in unstrained and strained Si1-xGexalloys", IEEE J. Techno. Comp. Aided Design, (1), 1997.


  12. F. M. Bufler, P. Graf, S. Keith, B. Meinerzhagen: "Full band Monte Carlo investigation of electron transport in strained Si grown on Si1-xGex substrates", Appl. Phys. Lett., 70, 2144-2146, 1997.


  13. F. M. Bufler, P. Graf, B. Meinerzhagen, B. Adeline, M. M. Rieger, H. Kibbel, G. Fischer: "Low- and high-field electron-transport parameters for unstrained and strained Si1-xGex", IEEE Electron Device Lett., 18, 264-266, 1997.


  14. C. Jungemann, S. Yamaguchi, H. Goto: " Convergence Estimation for Stationary Ensemble Monte Carlo Simulations ", IEEE J. Techno. Comp. Aided Design, (10), 1998.


  15. C. Jungemann, B. Meinerzhagen, S. Decker, S.Keith, S. Yamaguchi, H. Goto: " Is Physically Sound and Predictive Modeling of NMOS Substrate Currents Possible? " , Solid-State Electron., 42, 647-655, 1998.


  16. H. Goto, S. Yamaguchi, C. Jungemann: "Inverse Modeling as a Basis for Predictive Device Simulation of Deep Sub-micron Metal-Oxide-Semiconductor Field Effect Transistors" , Jap. J. Appl. Phys., 37, 5437-5443, 1998. Abstract


  17. F. M. Bufler, P. Graf, B. Meinerzhagen, G. Fischer, H. Kibbel: "Hole Transport Investigation in Unstrained and Strained SiGe", in J. Vac. Sci. Technol. B, 16, 1667-1669, 1998.


  18. F. M. Bufler, P. Graf, B. Meinerzhagen: "High-field hole transport in strained Si and SiGe by Monte Carlo simulation: Full band versus analytic band models", in VLSI Design, 8, 41-45, 1998.


  19. B. Neinhüs, S. Decker, P. Graf, F. M. Bufler, B. Meinerzhagen: "Consistent hydrodynamic and Monte-Carlo simulation of SiGe HBTs based on table models for the relaxation times ", in VLSI Design, 8, 387-391, 1998.


  20. F. M. Bufler, B. Meinerzhagen: " Hole transport in strained Si1-xGex alloys on Si1-yGey substrates", J. Appl. Phys., vol. 84, pp. 5597-5602, 1998.


  21. C. Jungemann, S. Keith, M. Bartels, B. Meinerzhagen: " Efficient Full-Band Monte Carlo Simulation of Silicon Devices", IEICE TRANS. ELECTRON., vol. E82-C, no. 6, pp. 870-879, 1999.


  22. C. Jungemann, B. Meinerzhagen, M. Eller: " On the Number of Fast Interface States of Standard CMOS Technologies ", IEEE Electron Device Lett., vol. 20, no. 6, pp. 283-285, 1999.


  23. C. Jungemann, D. Dudenbostel, B. Meinerzhagen: " Hall Factors of Si NMOS Inversion Layers for MAGFET Modeling ", IEEE Trans. on Electron Devices, vol. 46, no. 8, pp. 1803-1804, 1999.


  24. C. Jungemann, S. Keith, B. Meinerzhagen: " Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile", IEICE Trans. on Electronics, vol. E83C, no. 8, pp. 1228-1234, 2000.


  25. C. Jungemann, B. Neinhüs, B. Meinerzhagen: "Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation" , VLSI Design, vol. 13, nos. 1-4, pp. 281-285, 2001.


  26. C. Jungemann, B. Meinerzhagen: " Analysis of the Stochastic Error of Stationary Monte Carlo Device Simulations " IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 985-992, 2001.


  27. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " Comparative Study of Electron Transit Times Evaluated by DD, HD, and MC Device Simulation for a SiGe HBT " IEEE Trans. Electron Devices, vol. 48, no. 10, pp. 2216-2220, 2001.


  28. C. Jungemann, B. Meinerzhagen: " On the Applicability of Nonself-Consistent Monte Carlo Device Simulations " IEEE Trans. Electron Devices, vol. 49, no. 6, pp. 1072-1074, 2002.


  29. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " Hierarchical 2D DD and HD Noise Simulations of Si and SiGe Devices: Part I - Theory " IEEE Trans. Electron Devices, vol. 49, no. 7, pp. 1250-1257, 2002.


  30. C. Jungemann, B. Neinhüs, S. Decker, B. Meinerzhagen: " Hierarchical 2D DD and HD Noise Simulations of Si and SiGe Devices: Part II - Results " IEEE Trans. Electron Devices, vol. 49, no. 7, pp. 1258-1264, 2002.


  31. C. Jungemann, B. Meinerzhagen: " In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations " IEICE Trans. on Electronics, vol. E86-C, no. 3, pp. 314-319, 2003.


  32. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " Hydrodynamic Modeling of RF Noise for Silicon-Based Devices " Int. Journal of High Speed Electronics and Systems, vol. 13, no. 3, pp. 823-848, 2003.


  33. B. Meinerzhagen, C. Jungemann, B. Neinhüs, M. Bartels: " Numerical Simulation of Strained Si/SiGe Devices: The Hierarchical Approach " Applied Surface Science, vol. 224, pp. 235-240, 2004.


  34. M. Bartels, B. Neinhüs, C. Jungemann, B. Meinerzhagen: " Evaluation of Compact Noise Modeling for Si/SiGe HBTs based on Hierarchical Hydrodynamic Noise Simulation " Applied Surface Science, vol. 224, pp. 350-353, 2004.


  35. C. Jungemann, N. Subba, J.-S. Goo, C. Riccobene, Q. Xiang, B. Meinerzhagen: " Investigation of Strained Si/SiGe Devices by MC Simulation " Solid-State Electron., vol. 48, no. 8, pp. 1417-1422, 2004.


  36. C. Jungemann, B. Neinhüs, B. Meinerzhagen, R. W. Dutton: " Investigation of Compact Models for RF Noise in SiGe HBTs by Hydrodynamic Device Simulation " IEEE Trans. Electron Devices, vol. 51, no. 6, pp. 956-961, 2004.


  37. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " TCAD ready density gradient calculation of channel charge for Strained Si/Strained Si_{1-x}Ge_x dual channel pMOSFETs on (001) Relaxed Si_{1-y}Ge_y " Journal of Computational Electronics, Vol. 3, pp. 193-197, 2004.


  38. C. Jungemann, B. Meinerzhagen: " A Legendre Polynomial Solver for the Langevin Boltzmann Equation " Journal of Computational Electronics, Vol. 3, pp. 157-160, 2004.


  39. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " Study of charge carrier quantization in strained Si-nMOSFETs " Materials Science in Semiconductor Processing, Vol. 8/1-3, pp.363-366, 2005.


  40. T. Grasser, R. Korsik, C. Jungemann, H. Kosina, S. Selberherr: " A Non-Parabolic Six Moments Model for the Simulation of sub-100nm Semiconductor Devices " Journal of Computational Electronics, Vol. 3, pp. 183-187, 2004.


  41. K. Gopalakrishnan, R. Woo, C. Jungemann, P. B. Griffin, J. D. Plummer: " Impact Ionization MOS (I-MOS) ---Part II: Experimental Results " IEEE Trans. Electron Devices, Vol. 52, pp. 77-84, 2005.


  42. T. Grasser, R. Korsik, C. Jungemann, H. Kosina, S. Selberherr: " Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data " Journal of Appl. Phys., Vol. 97, pp. 093710, 2005.


  43. C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen: " Failure of Moments-Based Transport Models in Nanoscale Devices near Equilibrium " IEEE Trans. Electron Devices, Vol. 52, pp. 2404-2408, 2005.


  44. M.I.Vexler, A.El Hdiy, D.Grgec, S.E.Tyaginov, R.Khlil, B.Meinerzhagen, A.F.Shulekin, I.V.Grekhov: " Tunnel charge transport within silicon in reversely-biased MOS tunnel structures " Microelectronics Journal, vol. 37, no. 2, pp. 114-120, 2006.


  45. C. Jungemann, B. Neinhüs, C. D. Nguyen, A. J. Scholten, L. F. Tiemeijer, B. Meinerzhagen: " Numerical Modeling of RF Noise in Scaled MOS Devices " Solid-State Electron., Vol. 50, pp. 10-17, 2006.


  46. C. Jungemann, B. Meinerzhagen: " Do Hot Electrons Cause Excess Noise? " Solid-State Electron., Vol. 50, pp. 674-679, 2006.


  47. T. Krishnamohan, D. Kim, C. D. Nguyen, C. Jungemann, Y. Nishi, K. C. Saraswat: " High Mobility, Low Band To Band Tunneling (BTBT), Strained Germanium, Double Gate (DG), Heterostructure FETs: Simulations " IEEE Trans. Electron Devices, Vol. 53(5), pp. 1000-1009, 2006.


  48. A. T. Pham, C. D. Nguyen, C. Jungemann, B. Meinerzhagen: " A Semiempirical Surface Scattering Model for Quantum Corrected Full-Band Monte-Carlo Simulation of Biaxially Strained Si/SiGe NMOSFETs " Solid-State Electron., Vol. 50, pp. 694-700, 2006.


  49. C. Jungemann, A. T. Pham, B. Meinerzhagen, C. Ringhofer, M. Bollhöfer: " Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle " Journal of Appl. Phys. 100, 024502, 2006.


  50. A. T. Pham, C. Jungemann, C. D. Nguyen, B. Meinerzhagen: " A Semiempirical Surface Scattering Model for Quantum Corrected Monte-Carlo Simulation of Unstrained Si and Strained Si/SiGe PMOSFETs " Materials Science and Engineering B, Vol. 135, pp. 224-227, 2006.


  51. S. Smirnov, C. Jungemann: "A full band deterministic model for semiclassical carrier transport in semiconductors" Journal of Appl. Phys. 99, 063707, 2006.


  52. C. Jungemann, A.T. Pham, B. Meinerzhagen: " A Linear Response Monte Carlo Algorithm for Inversion Layers and Magnetotransport " Journal of Computational Electronics, Vol. 5 (4), pp. 411-414, 2006.


  53. T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersboeck, S. Selberherr, A.T. Pham, B. Meinerzhagen, P. Wong, Y. Nishi, K.C. Saraswat: " High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs " Microelectronic Engineering, Vol. 84, pp. 2063-2066, 2007.


  54. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Physics-based modeling of hole inversion layer mobility in strained SiGe on insulator " IEEE Trans. on Electron Devices, Vol. 54 (9), pp. 2174-2182, 2007.


  55. A.T. Pham, C. Jungemann, B. Meinerzhagen: " A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization " Journal of Computational Electronics, Vol. 7 (3), pp. 99-102, 2008.


  56. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates " Solid-State Electron., Vol. 52, pp. 1437-1442, 2008.


  57. A. T. Pham, C. Jungemann, M. Klawitter, B. Meinerzhagen: " Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers " Solid-State Electron., Vol. 52, pp. 1660-1668, 2008.



  58. M. I. Vexler, A. Kuligk, B. Meinerzhagen: " Simulation of hole and electron tunnel currents in MIS devices adopting the symmetric Franz-type dispersion relation for the charged carriers in thin insulators " Solid-State Electron., Vol. 53, pp. 364-370, 2009.



  59. M. I. Vexler, A. Kuligk, B. Meinerzhagen: " Franz Dispersion Relation for Tunneling Simulations in Polycrystalline Silicon/SiO2/Si3N4/SiO2/Si and TaN/Al2O3/Si3N4/SiO2/Si Structures " Japanese Journal of Applied Physics, Vol. 48, pp. 05DE01, 2009.



  60. S. E. Tyaginov, M. I. Vexler, N. S. Sokolov, S. M. Suturin, A. G. Banshchikov, T. Grasser, B. Meinerzhagen: " Determination of correlation length for thickness fluctuations in thin oxide and fluoride films " J. Phys. D: Appl. Phys., Vol. 42, pp. 115307, 2009.



  61. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Modeling and validation of piezoresistive coefficients in Si hole inversion layers " Solid-State Electronics, Vol. 53, pp. 1325-1333, 2009.



  62. A. T. Pham, C. Jungemann, B. Meinerzhagen: " On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs " Journal of Computational Electronics, Vol. 8, pp. 242-266, 2009 (invited).

  63. A. T. Pham, Q. T. Zhao, C. Jungemann, B. Meinerzhagen, S. Mantl, B. Soree, G. Pourtois: " Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C-V characteristics, mobility, and ON current " Solid State Electronics, Vol. 65-66, pp. 64-71, 2011.

  64. B. Meinerzhagen, A. T. Pham, S. M. Hong, C. Jungemann: " Numerical Modeling of Noise and Transport in SOI Devices " ECS Transactions, Vol. 35, pp. 303-312, Montreal (Canada), 2011 (invited).


  65. A. T. Pham, B. Sorée, W. Magnus, C. Jungemann, B. Meinerzhagen, G. Pourtois: " Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations " Solid-State Electronics, Vol. 71, pp. 30-36, 2012.


  66. C. Jungemann, A. T. Pham, S. M. Hong, B. Meinerzhagen: " Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices " Solid-State Electronics, Vol. 84, pp. 112-119, 2013.


  67. A. Bora, A. Pathak, K.-C. Liao, M. Vexler, A. Kuligk, A. Cattani-Scholz, B. Meinerzhagen, G. Abstreiter, J. Schwartz, M. Tornow: " Organophosphonates as Model System for Studying Electronic Transport through Monolayers on SiO2/Si Surfaces " Appl. Phys. Lett., Vol. 102, 241602, 2013.
    Supplemental Material:
    "Organophosphonates as Model System for Studying Electronic Transport through Monolayers on SiO2/Si Surfaces "


  68. A. Kuligk, B. Meinerzhagen: " On the Modeling of Coulomb Scattering in p-MOSFETs with Hafnium Based Metal Gate Stacks " Solid-State Electronics, Vol. 108, pp. 84-89, 2015.



Konferenzbeiträge


  1. B. Meinerzhagen, J. M. J. Krücken, K. H. Bach, F. M. Stecher, W. L. Engl: "A modular approach to parallel mixed level device/circuit simulation", in VLSI Process/Device Modeling Workshop, 170-172, Kawasaki, August 1990.


  2. K.H. Bach, H.K. Dirks, B. Meinerzhagen: "Nonlinear Variable Transformation for Improved Convergence of Gummel's Relaxation Scheme", NUPAD III Tech. Dig, Honolulu (USA), 33-34, 1990.


  3. B. Meinerzhagen: "Hot-Electron Effects in MOSFETs", Euroform Wall Free University, European School on Device Modeling, DEIS-University of Bologna, Bologna (Italien) , 1991.


  4. B. Meinerzhagen, H.J. Peifer, R. Thoma, W.L. Engl: "Modeling of Impact Ionization by Consistent Monte Carlo and Hydrodynamic Models in Comparison with Measurements", VPAD 91 Tech. Dig., Oiso (Japan), 56-57, 1991.


  5. A. Emunds, C. Jungemann, W. L. Engl: "A consistent model for low and high-field electron transport in homogeneous silicon inversion layers" , in International Conference on Solid State Devices and Materials, 462-464, Yokohama,Japan, 1991.


  6. H. J. Peifer, B. Meinerzhagen, R. Thoma, W. L. Engl: "Evaluation of impact ionization modeling in the framework of hydrodynamic equations", in IEDM Tech. Dig., 131-134, 1991.


  7. B. Meinerzhagen, R. Thoma, H. J. Peifer, W. L. Engl: "On the consistency of the hydrodynamic and the Monte Carlo models", in Proc. IWCE, 7-12, Illinois, 1992. Urbana-Champaign.


  8. B. Meinerzhagen, K.H. Bach, I. Borg, W.L. Engl: "A New Highly Efficient Nonlinear Relaxation Scheme for Hydrodynamic MOS Simulations", NUPAD IV Techn. Dig., Seattle (USA), 91-96, 1992.


  9. I. Bork, B. Meinerzhagen, W.L. Engl: "Hydrodynamic Simulation of Hysteresis Phenomena in SOI MOSFET Characteristics", Proceedings of ESSDERC'92, Leuven (Belgien), 295-298, 1992.


  10. P. Graf, R. Thoma, W. L. Engl: "Monte Carlo simulations of correlation functions for the extraction of transport coefficients and the validity of the relaxation time approximation", vorgestellt auf der Frühjahrstagung der DPG in Verbindung mit der 13th General Conference of the EPS in Regensburg, March 1993.


  11. W.L Engl, B. Meinerzhagen: "Device Modeling beyond Drift Diffusion Approximation", 1993 Symposium on Semiconductor Modeling & Simulation, Taipei (Taiwan), 1993.


  12. M. Stecher, B. Meinerzhagen, I. Bork, J. M. J. Krücken, P. Maas, W. L. Engl: "Influence of energy transport related effects on NPN BJT device performance and ECL gate delay analyzed by 2D parallel mixed level device/circuit simulation", in VPAD Abstracts, 170-171, 1993.


  13. B. Meinerzhagen: "Modeling of Impact Ionization in Short Channel Devices", 8th German-Japanese Forum on Information Technology, Weimar,1993.


  14. C. Jungemann, R. Thoma, M. Ekel, W. L. Engl: "An improved lucky electron model suitable for simulation of silicon NMOSFETs with low supply voltage", in HCIS Abstracts, Oxford, August 1993.


  15. M. Stecher, B. Meinerzhagen, I. Bork, W. L. Engl: "On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance," in "Simulation of Semiconductor Devices and Processes", Vol. 5, S. Selberherr, H. Stippel, E. Strasser (eds.), Springer-Verlag Wien New York, 49-52, 1993.


  16. C. Jungemann, P. Graf, G. Zylka, R. Thoma, W. L. Engl: "New highly efficient method for the analysis of correlation functions based on a spherical harmonics expansion of the BTE's Green's function" , in Proc. IWCE, 45-48, Portland, Oregon, May 1994.


  17. I. Bork, C. Jungemann, B. Meinerzhagen, W. L. Engl: "Influence of heat flux on the accuracy of hydrodynamic models for ultrashort Si MOSFETs", in NUPAD Tech. Dig., Honolulu, 1994.


  18. C. Jungemann, S. Keith, B. Meinerzhagen, W. L. Engl: "On the influence of bandstructure and scattering rates on hot electron modeling", in Proc. SISDEP, 6, 222-225, Erlangen, 1995.


  19. P. Graf, F. M. Bufler, B. Meinerzhagen, W. L. Engl: "Ein Monte-Carlo-Modell für verspannte SixGe1-x-Systeme", in Proc. 40. Internationales Wissenschaftliches Kolloquium, 3, 411-415, Ilmenau, 1995. Technische Universität Ilmenau.


  20. C. Jungemann, R. Thoma, B. Meinerzhagen, W. L. Engl: "A soft threshhold lucky electron model improved for device simulations under low voltage conditions", in ICVC, 211-214, Seoul, 1995.


  21. F. M. Bufler, P. Graf, B. Meinerzhagen, H. Kibbel, G. Fischer: "A new comprehensive and experimentally verified electron transport model for strained SiGe", in Proc. SISPAD, 57-58, Tokyo, September 1996.


  22. C. Jungemann, S. Decker, R. Thoma, W. L. Engl, H. Goto: "Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo simulation", in Proc. SISPAD, 1, 65-66, 1996.


  23. C. Jungemann, S. Yamaguchi, H. Goto: "Accurate prediction of hot-carrier effects for a deep sub-µm CMOS technology based on inverse modeling and full band Monte Carlo device simulation", in Proc. SISPAD, 1, 59-60, 1996.


  24. C. Jungemann, S. Yamaguchi, H. Goto: "Efficient full band Monte Carlo hot carrier simulation for silicon devices", in Proc. ESSDERC, 26, 821-824, Bologna, 1996.


  25. C. Jungemann, S. Yamaguchi, H. Goto: "Is there experimental evidence for a difference between surface and bulk impact ionization in silicon", in IEDM Tech. Dig., 383-386, 1996.


  26. B. Meinerzhagen, C. Jungemann, S. Decker, S. Keith, S. Yamaguchi, H. Goto: "Predictive and efficient modeling of substrate currents in n-channel MOS-transistors", in International Symposium on VLSI Technology, Systems and Applications, 14, 232-235, Taipei, 1997.


  27. P. Graf, S. Keith, B. Meinerzhagen: "Evaluation of solenoidal and statistically enhanced total current densities", in Proc. SISPAD, 2, 221-224, Cambridge, MA (USA), 1997.


  28. C. Jungemann, S. Yamaguchi, H. Goto: "Convergence estimation for stationary ensemble Monte Carlo simulations", in Proc. SISPAD, 2, 209-212, Cambridge, MA, 1997.


  29. C. Jungemann, S. Yamaguchi, H. Goto: "Investigation of the influence of impact ionization feedback on the spatial distribution of hot carriers in an NMOSFET", in Proc. ESSDERC, 27, 336-339, Stuttgart, 1997.


  30. S. Yamaguchi, C. Jungemann, H. Goto: "High Performance Full-Band Monte Carlo Device Simulator FALCON", The 44th Spring Meeting of the Japan Society of Applied Physics, 1997.


  31. S. Keith, F. M. Bufler, B. Meinerzhagen: "Full band Monte-Carlo device simulation of an 0.1 µm n-channel MOSFET in strained silicon material", in Proc. ESSDERC, 27, 200-203, Stuttgart, 1997.


  32. B. Neinhüs, P. Graf, S. Decker, B. Meinerzhagen: "Examination of the transient drift-diffusion and hydrodynamic modeling accuracy for advanced SiGe HBTs by 2D Monte-Carlo device simulation", in Proc. ESSDERC, 27, 188-191, Stuttgart, 1997.


  33. P. Graf, F. M. Bufler, B. Meinerzhagen, C. Jungemann: "A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs", IEDM, 881-884, Washington, 1997.


  34. H. Kanata, C. Jungemann, S. Satoh: "Parameter Extraction of Hydrodynamic Model by Using Fullband Monte Carlo Simulator", in Proc. Silicon Device Meeting, NTT, Atsugi, 1997 (in Japanese).


  35. C. Jungemann, B. Meinerzhagen: "On the modeling of CV data for state of the art CMOS technologies: Do we need to include fast interface states?", in Proc. SISPAD, 2, 227-230, Leuven, 1998.


  36. F. M. Bufler, S. Keith, B. Meinerzhagen: "Anisotropic Ballistic In-Plane Transport of Electrons in Strained Si", in Proc. SISPAD, 6, 239-242, Leuven, 1998.


  37. S. Keith, C. Jungemann, B. Meinerzhagen: "Full band Monte Carlo device simulation of 0.1-0.5µm strained-Si p-MOSFETs", Proc. ESSDERC, 28, 312-315, Bordeaux, 1998.


  38. C. Jungemann, M. Bartels, S. Keith, B. Meinerzhagen: "Efficient Methods for Hall Factor and Transport Coefficient Evaluation for Electrons and Holes in Si and SiGe Based on a Full-Band Structure", in Proc. IWCE, Osaka, 104-107, 1998.


  39. F. M. Bufler, B. Meinerzhagen: "Hydrodynamic Transport Parameters for Holes in Strained Silicon", in Proc. IWCE, Osaka, 242-245, 1998.


  40. C. Jungemann, S. Keith, B. Meinerzhagen: "Full-Band Monte Carlo Simulation of a 0.12µm-Si-PMOSFET with and without a Strained SiGe-Channel", Tech. Dig. IEDM, San Francisco, 897-900, 1998.


  41. B. Meinerzhagen: "Simulation of SiGe Devices Based on a Hierarchy of Numerical Models", in Proc. 43. Internationales Wissenschaftliches Kolloquium, 2, 331-336, Ilmenau, 1998. Technische Universität Ilmenau.


  42. C. Jungemann, S. Keith, B. Meinerzhagen: " Noise Properties and Efficiency of Terminal Current Estimators for Monte Carlo Simulation of Semiconductor Devices", Second IMACS Seminar on Monte Carlo Methods, Varna, Bulgaria, IMACS20, 1999.


  43. Dirk Dudenbostel, C. Marschner, C. Jungemann, R. Laur: "A Novel CMOS Magnetic Sensor Micro System with Integrated Micro Coils and Temperature Sensor for Offset Calibration", in Tech. Dig Transducers'99, Sendai, Japan, pp. 176-179, June 1999.


  44. S. Keith, C. Jungemann, S. Decker, B. Neinhüs, M. Bartels, B. Meinerzhagen: "Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile", Proc. SISPAD, 219-222, Kyoto, 1999.


  45. I. Bork, W. Molzer, C. D. Nguyen: "Optimization of temperature-time profiles in rapid thermal annealing", Proc. SISPAD, 107-109, Kyoto, 1999.


  46. I. Bork, W. Molzer, C. D. Nguyen: "Reduction of Dopant Diffusion by Optimizing Temperature-Time Profiles of Rapid Thermal Processes", 7. Int. Conference on Advanced Thermal Processing of Semiconductors, Colorado, USA, 1999.


  47. C. Jungemann, B. Meinerzhagen: "Impact of the Velocity Overshoot on the Performance of NMOSFETs with Gate Lengths from 80 to 250nm", Proc. ESSDERC, 29, 236-239, Leuven, 1999.


  48. M. Bartels, S. Decker, B. Neinhüs, B. Meinerzhagen: "A Robust Curve Tracing Scheme for the Simulation of Bipolar Breakdown Characteristics With Nonlocal Impact Ionization Models", Proc. ESSDERC, 29, 492-495, Leuven, 1999.


  49. M. Bartels, S. Decker, B. Neinhüs, K. H. Bach, A. Schüppen, B. Meinerzhagen: "Comprehensive Hydrodynamic Simulation of an Industrial SiGe Heterobipolar Transistor", BCTM, 105-109, Minneapolis, 1999.


  50. S. Decker, B. Neinhüs, B. Heinemann, C. Jungemann, B. Meinerzhagen: "Investigation of High Frequency Noise in a SiGe Heterobipolar Transistor Based on Shockley's Impedance Field Method and the Hydrodynamic Model", MSM, 364-367, San Diego, 2000.


  51. C. Jungemann, B. Neinhüs, B. Meinerzhagen: "Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation" IWCE, 96-97, Glasgow, 2000.


  52. C. Jungemann, B. Neinhüs, B. Meinerzhagen: "Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation" SISPAD, 42-45, Seattle, 2000.


  53. M. Bartels, B. Meinerzhagen: "Investigation of Time Step Control for the Mixed-Level Device/Circuit Simulation of SiGe Bipolar Microwave Power Amplifiers" Proc. SCEE, 309-316, Warnem\"unde, Germany, 2000.


  54. B. Neinhüs, C. D. Nguyen, C. Jungemann, B. Meinerzhagen: "A CPU efficient electron mobility model for MOSFET simulation with quantum corrected charge densities" ESSDERC, 332-335, Cork, 2000.


  55. M. Bartels, B. Meinerzhagen: "Design of RF Power amplifiers Based on Mixed-Level Device/Circuit Simulation" Proc. ITG Workshop Mikroelektronik für die Informationstechnik, 51-54, Darmstadt, 2000.


  56. C. Jungemann, B. Meinerzhagen: "Efficiency and stochastic error of Monte Carlo device simulations" IEDM, 101-104, San Francisco, 2000.


  57. C. Jungemann, B. Heinemann, K. Tittelbach-Helmrich, B. Meinerzhagen: "An accurate, experimentally verified electron minority carrier mobility model for Si and SiGe" IEDM, 109-112, San Francisco, 2000.


  58. M. Hinz, I. Könenkamp, E.-H. Horneber: "Behavioral Modeling and Simulation of Phase-locked Loops for RF Front Ends", Midwest Symposium on Circuits and Systems, Michigan, 8.-11.08.2000.


  59. M. Hinz, I. Könenkamp, E.-H. Horneber: "Modellierung und Simulation einer klassischen digitalen Phasenregelschleife", ITG Workshop: Mikroelektronik für die Informationstechnik, Darmstadt, 20./21.11.2000


  60. I. Könenkamp, M. Hinz, E.-H. Horneber: "Bottom-Up-Verfahren zur Generierung von Verhaltensmodellen für analoge Hardwarebeschreibungssprachen", ITG Workshop: Mikroelektronik für die Informationstechnik, Darmstadt, 20./21.11.2000


  61. M. Hinz, I. Könenkamp, E.-H. Horneber: "Modeling and Simulation of Phase-locked Loops in the Time and Frequency Domain", International Symposium on Microelectronics and Assembly, Singapur, 27.11-2.12.2000


  62. C. Jungemann, C. D. Nguyen, B. Neinhüs, B. Meinerzhagen: "Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs" MSM, 458-461, Hilton Head Island, 2001.


  63. C. Jungemann, D. Grgec, B. Meinerzhagen: "A Methodology for Consistent MC, HD and DD Simulations of Submicrometer NMOSFETs" Proc. MIPRO, Croatia, 14-17, 2001.


  64. S. Decker, C. Jungemann, B. Neinhüs, B. Meinerzhagen: "An accurate and efficient methodology for RF noise simulation on nm-scale MOSFETs based on a Langevin-type drift-diffusion model" Proc. ICNF, USA, 659-662, 2001.


  65. M.I. Vexler, N. Asli, A.F. Shulekin, B. Meinerzhagen, P. Seegebrecht: "Compact Quantum Model for a Silicon MOS Tunnel Diode" Proc. of the 12th Biannual Conference on Insulating Films on Semiconductors - INFOS, Udine, Italy, 61-62, 2001.


  66. S. Decker, C. Jungemann, B. Neinhüs, B. Meinerzhagen: "2D RF Noise Simulations Based on a Langevin-Type Drift-Diffusion Model and FB-MC Generated Local Noise Sources" SISPAD, 136-139, Springer (Wien, New York), 2001.


  67. C. Jungemann, B. Meinerzhagen: "Modeling of the Stochastic Noise of Monte Carlo Device Simulations" IMACS-MCM, 56-57, Salzburg, 2001.


  68. C. Jungemann, B. Neinhüs, S. Decker, B. Meinerzhagen: " Hierarchical 2D RF Noise Simulation of Si and SiGe Devices by Langevin-type DD and HD Models based on MC Generated Noise Parameters " IEDM, 481-484, Washington, 2001.


  69. B. Neinhüs, C. Jungemann, B. Meinerzhagen: " DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations " MSM 2002, 548-551, Puerto Rico, 2002.


  70. C. D. Nguyen, C. Jungemann, B. Neinhüs, S. Hackenbuchner, B. Meinerzhagen: " Entwicklung eines Modells für die recheneffiziente, näherungsweise quantenmechanische Bestimmung der Löcherdichte im Inversionskanal eines pMOSFETs " Analog 2002, GMM-Fachbericht, Band 38, pp. 241-245, 2002, VDE-Verlag.


  71. D. Grgec, C. D. Nguyen, C. Jungemann, B. Meinerzhagen: " Quantum Correction of Electron Density for Monte Carlo Device Simulation " Analog 2002, GMM-Fachbericht, Band 38, pp. 359-361, 2002, VDE-Verlag.


  72. M. Bartels, B. Neinhüs, C. Jungemann, S. Decker, B. Meinerzhagen: " Numerische Simulation des Rauschverhaltens eines Si/SiGe-Heterobipolartransistors basierend auf der Hierarchischen Numerischen Bauelementsimulation " Analog 2002, GMM-Fachbericht, Band 38, pp. 47-52, 2002, VDE-Verlag.


  73. B. Meinerzhagen, C. Jungemann, B. Neinhüs, M. Bartels: " Hierarchical Numerical Simulation exemplified for SiGe Heterojunction Bipolar Transistors " Analog 2002, GMM-Fachbericht, Band 38, pp. 15-20, 2002, VDE-Verlag.


  74. C. Jungemann, B. Meinerzhagen: " In-Advance CPU Time Analysis for Monte Carlo Device Simulations " SISPAD, 103-106, Kobe (Japan) 2002.


  75. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " Noise Analysis for a SiGe HBT by Hydrodynamic Device Simulation " ESSDERC, 71-74, Firenze, Italy, 2002.


  76. D. Grgec, M. I. Vexler, C. Jungemann, B. Meinerzhagen: " Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures " ESSDERC, 179-182, Firenze, Italy, 2002.


  77. A. J. Scholten, L. F. Tiemeijer, R. van Langevelde, R. J. Havens, V. A. Venezia, A. T. A. Zegers-van Duijnhoven, B. Neinhüs, C. Jungemann, D. B. M. Klaassen: " Compact modeling of drain and gate current noise for RF CMOS " IEDM, 129-132, San Francisco, USA, 2002.


  78. M. Bartels, B. Neinhüs, C. Jungemann, B. Meinerzhagen: " Evaluation of Compact Noise Modeling for Si/SiGe HBTs Based on Hierarchical Hydrodynamic Noise Simulation " Proceedings of ISTDM, pp. 77--78, Nagoya, Japan, 2003.


  79. M. Hinz: "A Novel Nonlinear Multi-Level Model for PLL", Analog 2002, IMM/ITG Workshop, Bremen, May 2002


  80. B. Meinerzhagen, C. Jungemann, B. Neinhüs, and M. Bartels: " Numerical Simulation of Strained Si/SiGe Devices: The Hierarchical Approach " Proceedings of ISTDM, pp. 103--104, Nagoya, Japan, 2003.


  81. C. D. Nguyen, C. Jungemann, B. Neinhüs, B. Meinerzhagen, J. Sedlmeir and W. Molzer: " Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale pMOSFETs " Technical Proceedings of the NANOTECH, 56-59, San Fransisco, USA, 2003.


  82. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " On the Diffusion Noise Sources of the Impedance Field Method " Proceedings of ICNF, pp. 636-639, Prague, Czech Republic, 2003.


  83. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " A Simple Compact Model for Terminal Current Noise of SiGe HBTs " Proceedings of ICNF, pp. 636-639, Prague, Czech Republic, 2003.


  84. C. Jungemann, B. Meinerzhagen: " Maximum Drive Current Scaling Properties of Strained Si NMOS in the Deca--Nanometer Regime " Proceedings of SISPAD, pp. 191-194, Boston, USA, 2003.


  85. Tae-Young Oh, C. Jungemann, and R. W. Dutton: " Hydrodynamic Simulation of RF Noise in Deep-submicron MOSFETs " Proceedings of SISPAD, pp. 87-90, Boston, USA, 2003.


  86. C. Jungemann, B. Meinerzhagen: " MC Simulation of Strained Si/SiGe Devices " Proceedings of ESSDERC, pp. 9-14, Estoril, Portugal, 2003.


  87. C. Jungemann, B. Neinhüs, C. D. Nguyen, B. Meinerzhagen, R. W. Dutton, A. J. Scholten, and L. F. Tiemeijer: " Hydrodynamic Modeling of RF Noise in CMOS Devices " IEDM, pp. 871-874, Washington, USA, 2003.


  88. T. Krishnamohan, C. Jungemann, and K. C. Saraswat: " A novel, very high performance, sub-20nm Depletion-Mode Double-Gate (DMDG) Si/Si{x}Ge{1-x}/Si channel PMOSFET " IEDM, pp. 687-690, Washington, USA, 2003.


  89. I. Kebaisy, M. Hinz: " Evaluation der Referenzunterdrückung einer auf Verhaltensebene modellierten Phasenregelschleife mittels Transienten- oder Periodic Steady State Analyse " Konferenz-Einzelbericht: GMM Fachbericht "11. E.I.S. - Workshop: Entwurf Integrierter Schaltungen und Systeme", Band 40, S. 119-123, VDE Verlag GMBH, Berlin/ Offenbach, Erlangen (Germany), 2003.


  90. M. Hinz, I. Kebaisy, F. Marienhagen, U. Knoechel, R. Frevert: " Characterization Environment & Web-Database for RF Building Blocks " EkompaSS-Workshop, Hannover (Germany), 2003.


  91. C. Jungemann, B. Neinhüs, B. Meinerzhagen, R. W. Dutton: " Accuracy assessment of compact RF noise models for SiGe HBTs by hydrodynamic device simulation " FaN04, Proceedings of SPIE, Noise in Devices and Circuits II, pp. 173-184, Gran Canaria, Spain, 2004.


  92. R. Navid, C. Jungemann, T. H. Lee, R. W. Dutton: " Close-in phase noise in electrical oscillators " FaN04, Proceedings of SPIE, Gran Canaria, Spain, 2004.


  93. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " Study of Charge Carrier Quantization in Strained Si-nMOSFETs " Proceedings of ISTDM, pp. 83-84, Frankfurt (Oder), Germany, 2004.


  94. C. Ni Chleirigh, C. Jungemann, J. Jung, O. O. Olubuyide, J. L. Hoyt: " Extraction of band offsets in Strained Si/Strained SiGe on relaxed SiGe dual-channel enhanced mobility structures " SiGe Materials, Processing and Devices Symposium, Hawai, 2004.


  95. C. Jungemann, B. Neinhüs, C. D. Nguyen, B. Meinerzhagen: " Impact of the Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynamic Simulation " SISPAD, pp. 235-238, MUNICH, 2004.


  96. T. Krishnamohan, C. Jungemann, K. Saraswat: " Very High Performance, Sub-20nm, Strained Si and SiGe, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETs " SISPAD, pp. 191-194, MUNICH, 2004.


  97. T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, and S. Selberherr: " Advanced Transport Models for Sub-Micrometer Devices " SISPAD, pp. 1-8, MUNICH, 2004.


  98. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " Noise Modeling of Si and SiGe Devices " ICSICT, vol. 2, pp. 1112-1117, Beijing, 2004.


  99. D. Grgec, C. Jungemann, C. D. Nguyen, B. Neinhüs, B. Meinerzhagen " An Accurate and Efficient Surface Scattering Model for Monte Carlo Device Simulation " ICSICT, vol. 2, pp. 991-994, Beijing, 2004.


  100. C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen: " TCAD ready density gradient calculation of channel charge for Strained Si/Strained Si1-xGex dual channel pMOSFETs on (001) Relaxed Si1-yGey " IWCE Abstracts, pp. 40-41, Purdue, 2004.


  101. C. Jungemann, B. Meinerzhagen: " A Legendre Polynomial Solver for the Langevin Boltzmann Equation " IWCE Abstracts, pp. 22-23, Purdue, 2004.


  102. T. Grasser, R. Korsik, C. Jungemann, H. Kosina, S. Selberherr: " A Bulk Monte Carlo Based Six Moments Model for the Simulation of sub-100nm Semiconductor Devices " IWCE Abstracts, pp. 36-37, Purdue, 2004.


  103. C. Jungemann, B. Neinhüs, B. Meinerzhagen: " "Noise modeling in scaled MOSFET devices" ULIS, pp. 41-44, Bologna, 2005.


  104. C. Jungemann, B. Meinerzhagen: "Über die Vernachlässigung von Beschleunigungseffekten in der Simulation von Siliziumbauelementen" ANALOG'05, GMM-Fachbericht 46, pp. 59-63, Hannover, 2005.


  105. C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen: " Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium " Technical Proceedings of the NANOTECH(Vol. 3), pp. 25-28 , Anaheim, 2005.


  106. C.D. Nguyen, C. Jungemann, B. Meinerzhagen: " Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation " Technical Proceedings of the NANOTECH(Vol. 3), pp. 33-36 , Anaheim, 2005.


  107. B. Neinhüs, C. Jungemann, B. Meinerzhagen: " Comparative Hierarchical Numerical Noise Simulations of a pnp and npn-type SiGe HBT " FaN05, Proceedings of SPIE, vol. 5844, pp. 150-157, Austin, 2005.


  108. C. Jungemann, B. Meinerzhagen: " Noise Calculation in the Semiclassical Framework: A Critical Analysis of the Monte Carlo Method and a Numerical Alternative " LSSC, Sozopol (Bulgaria), 2005. (LSSC 2005, Springer Verlag Berlin Heidelberg, LNCS 3743, pp. 164-171, 2006)


  109. C. Jungemann, B. Meinerzhagen: "A Frequency Domain Spherical Harmonics Solver for the Langevin Boltzmann Equation" ICNF, pp. 777-782, Salamanca, AIP Conf. Proc. 780, 2005.


  110. C. Jungemann, B. Meinerzhagen: "On the high frequency limit of the impedance field method for Si" ICNF, Salamanca, pp. 799-802, AIP Conf. Proc. 780, 2005.


  111. C. Jungemann, Matthias Bollhöfer, B. Meinerzhagen: " Convergence of the Legendre Polynomial Expansion of the Boltzmann Equation for Nanoscale Devices " ESSDERC, pp. 341-344, Grenoble (France), 2005.


  112. C. Jungemann, B. Meinerzhagen: " Do Hot Electrons Produce Excess Noise? " ESSDERC, pp. 329-332, Grenoble (France), 2005.


  113. A.T. Pham, C.D. Nguyen, C. Jungemann, B. Meinerzhagen: " A Semiempirical Surface Scattering Model for Quantum Corrected Monte Carlo Simulation of Strained Si-nMOSFETs " Proceedings of ESSDERC, pp. 293-296, Grenoble (France), 2005.


  114. C.D. Nguyen, A.T. Pham, C. Jungemann, B. Meinerzhagen: " Surface Scattering Model for Quantum Corrected Monte Carlo Simulation of Strained Si-nMOSFETs " TECHCON Abstracts, pp. 157, Portland (USA), 2005.


  115. C. Jungemann: " Stable Discretization of the Langevin-Boltzmann Equation based on Spherical Harmonics, Box Integration and Maximum Entropy Dissipation Principle " SEMIC, Vienna, Feb. 2006.


  116. C. Jungemann, A.T. Pham, B. Meinerzhagen: " A Linear Response Monte Carlo Algorithm for Inversion Layers and Magnetotransport " IWCE, Vienna, May 2006.


  117. A.T. Pham, C. Jungemann, C.D. Nguyen, B. Meinerzhagen: " A Semiempirical Surface Scattering Model for Quantum Corrected Monte-Carlo Simulation of Strained Si PMOSFETs " E-MRS IUMRS ICEM 2006 Spring Meeting, Nice (France), May 2006.


  118. A.T. Pham, C. Jungemann, C.D. Nguyen, B. Meinerzhagen: " Semiempirical Surface Scattering Model for Quantum Corrected Full-Band Monte-Carlo Simulation of Strained Si PMOSFETs " IEEE EDS Workshop on Adv. Devices, Duisburg (Germany), June 2006.


  119. C. Jungemann, B. Meinerzhagen: " Numerical Simulation of RF Noise in Si Devices " Proceedings of IEEE SISPAD, pp. 87-94, Monterey (USA), 2006 (invited).


  120. A.T. Pham, C. Jungemann, B. Meinerzhagen: " A Full-Band Spherical Harmonics Expansion of the Valence Bands up to High Energies " Proceedings of IEEE SISPAD, pp. 361-364, Monterey (USA), 2006.


  121. R. Hagenbeck, S. Decker, C. Jungemann, B. Meinerzhagen, M. Isler, T. Mikolajick, G. Tempel, P. Haibach: " Monte-Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase" Proceedings of IEEE SISPAD, pp. 322-325, Monterey (USA), 2006.


  122. I. Kebaisy, S. Domann, B. Meinerzhagen: " Präzise Modellierung und Parameteranpassung eines 5,2 GHz LNA für WLAN-Anwendungen " Konferenz-Einzelbericht: GMM Fachbericht "9. MBMV06-Workshop: Methoden und Beschreibungssprachen zur Modellierung und Verifikation von Schaltungen und Systemen", Dresden (Germany), 2006.


  123. I. Kebaisy, S. Domann, B. Meinerzhagen: " A 10mW Low-Noise Amplifier Design for 5.5 GHz Wireless Communication Systems " The 2nd IEEE INTERNATIONAL CONFERENCE: ICTTA06, Damascus (Syria), 2006.


  124. I. Kebaisy, F. Maibaum, M. Hinz, B. Meinerzhagen: "Eine präzise Multilevel-Testbench zur Systemsimulation und Charakterisierung einer 2.5-GHz PLL" Kleinheubacher Conference KH2006, Miltenberg (Germany), 2006, Advances in Radio Science, ARS, Volume 5, pp: 327-333, 2007.


  125. T. Krishnamohan, C. Jungemann, D. Kim, E. Ungersboeck, S. Selberherr, A.T. Pham, B. Meinerzhagen, P. Wong, Y. Nishi, K.C. Saraswat: " High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs " INFOS, Athens (Greece), 2007.


  126. C. Fiegna, M. Braccioli, S. C. Brugger, F. M. Bufler, P. Dollfus, V. Aubry-Fortuna, C. Jungemann, B. Meinerzhagen, P. Palestri, S. Galdin-Retailleau, E. Sangiorgi, A. Schenk, L. Selmi: " Comparision of Monte Carlo transport models for nanometer-size MOSFETs " Proceedings of IEEE SISPAD, pp. 57-60, Vienna (Austria), 2007.


  127. T. Krishnamohan, D. Kim, C. Jungemann, A.T. Pham, B. Meinerzhagen, Y. Nishi, K.C. Saraswat: " High Performance Strained Germanium Heterostructure FETs " Proceedings of IEEE SISPAD, pp. 21-24, Vienna (Austria), 2007.


  128. A.T. Pham, C. Jungemann, B. Meinerzhagen: " Simulation of magnetotransport in hole inversion layers based on full subbands " Proceedings of IEEE SISPAD, pp. 193-196, Vienna (Austria), 2007.


  129. A.T. Pham, C. Jungemann, B. Meinerzhagen: " Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates " Proceedings of IEEE ESSDERC, pp. 390-393, Munich (Germany), 2007.


  130. A.T. Pham, C. Jungemann, B. Meinerzhagen: " A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization " Proceedings of IWCE-12, Amherst (USA), 2007.


  131. A.T. Pham, C. Jungemann, M. Klawitter, B. Meinerzhagen: " Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers " International Semiconductor Device Research Symposium (ISDRS), College Park-MD (USA), 2007.


  132. T. Krishnamohan, A. T. Pham, C. Jungemann, B. Meinerzhagen, K. Saraswat " Mobility Modeling in Ultra-Thin (UT) Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs " SiGe and Ge; Processing, and Devices Symposium, Honolulu, Hawaii (USA), 2008.


  133. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Deterministic multisubband device simulations for strained double gate PMOSFETs including magnetotransport " IEDM Tech. Dig., pp. 895-898, San Francisco, CA (USA), 2008.


  134. T. Krishnamohan, D. Kim, T. V. Dinh, A. T. Pham, B. Meinerzhagen, C. Jungemann, K. Saraswat: " Comparison of (001), (110) and (111) Uniaxial- and Biaxial- Strained-Ge and Strained-Si PMOS DGFETs for All Channel orientations: Mobility Enhancement, Drive Current, Delay and Off-State Leakage " IEDM Tech. Dig., pp. 899-902, San Francisco, CA (USA), 2008.


  135. M. Vexler, A. Kuligk, B. Meinerzhagen: " Application of Franz Dispersion Relation in Simulations of Tunneling Transport in MIS and SONOS/TANOS Structures " IWDTF2008, Tokyo (Japan), 2008.


  136. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Modeling of piezoresistive coefficients in Si hole inversion layers " Proceedings of ULIS, Aachen (Germany), 2009.


  137. B. Meinerzhagen, A. T. Pham, C. Jungemann: " Predictive TCAD support for NanoMOS compact model development " 11. Workshop on Analog Circuit, Hannover (Germany), 2009.


  138. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Simulation of mobility variation and drift velocity enhancement due to uniaxial stress combined with biaxial strain in Si PMOS " Proceedings of IWCE-13, pp. 45-48, Beijing (China), 2009.


  139. A. T. Pham, C. Jungemann, B. Meinerzhagen: " A convergence enhancement method for deterministic multisubband device simulations of double gate PMOSFET " Proceedings of SISPAD, pp. 115-118, San Diego, CA (USA), 2009.


  140. C. D. Nguyen, A. Kuligk, M. I. Vexler, M. Klawitter, V. Beyer, T. Melde, M. Czernohorsky, B. Meinerzhagen: " Detailed Physical Simulation of Program Disturb Machanisms in Sub-50nm NAND Flash Memory Strings " Proceedings of SISPAD, pp. 261-264, Bologna, Italy, 2010.


  141. B. Meinerzhagen, A. T. Pham, S. M. Hong, C. Jungemann: " Solving Boltzmann Transport Equation without Monte-Carlo Algorithms - New Methods for Industrial TCAD Applications " Proceedings of SISPAD, pp. 293-296, Bologna (Italy), 2010 (invited).


  142. M. Klawitter, M. I. Vexler, A. Kuligk, B. Meinerzhagen: " Tunneling from quantized states for a given potential profile in SONOS devices " International Non-Volatile Memory Modeling and Simulation Workshop (NVM2S), Agrate (Italy), 2010.


  143. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Comparison of Strained SiGe Heterostructure-on-Insulator (001) and (110) PMOSFETs: C-V Characteristics, Mobility, and ON Current " Proceedings of ESSDERC, pp. 230-233, Seville (Spain), 2010.


  144. A. T. Pham, C. Jungemann, B. Meinerzhagen: " Simulation of Landau quantization effects due to strong magnetic fields in (110) Si hole inversion layers " Proceedings of IWCE, pp. 335-338, Pisa (Italy), 2010.


  145. A. T. Pham, B. Soree, W. Magnus, C. Jungemann, B. Meinerzhagen, G. Pourtois: " Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations " Proceedings of ULIS, pp. 195-198, Cork (Ireland), 2011.


  146. B. Meinerzhagen, A. T. Pham, S. M. Hong, C. Jungemann: " Numerical Modeling of Noise and Transport in SOI Devices " ECS Meeting Abstract, pp. 1457-1457, Montreal (Canada), 2011 (invited).


  147. C. Jungemann, A. T. Pham, S. M. Hong, B. Meinerzhagen: " Deterministic Simulation of 3D and Quasi-2D Electron and Hole Systems in SiGe Devices " ESSDERC 2012, Bordeaux (France), pp. 318-321, 2012 (invited).


  148. J. Dang, S. Milady, B. Meinerzhagen: " Design of On-Chip Inductors with Optimized Quality Factor for a 24GHz LNA " PRIME 2012, pp. 199-202, Aachen (Germany), 2012.


  149. A. Kuligk, D.A. Löhr, V. Beyer, B. Meinerzhagen: " Verified Physical Simulation of Program Disturb in Sub 50 nm NAND Flash Memory Strings " International Non-Volatile Memory Modeling and Simulation Workshop (NVM2S), Agrate (Italy), 2012.


  150. A. Kuligk, C. Dong Nguyen, D.A. Löhr, V. Beyer, B. Meinerzhagen: " Accurate and Efficient Physical Simulation of Program Disturb in Scaled NAND Flash Memories " Proceedings of ULIS, pp. 157-160, University of Warwick (England), 2013.


  151. J. Dang, S. Milady, M. Hinz, B. Meinerzhagen: " On the Influence of Layout Parasitics on the Design of a CMOS LNA at 5.5 GHz " Analog 2013, Aachen (Germany), 2013.


  152. J. Dang, A. Noculak, F. Korndörfer, C. Jungemann, B. Meinerzhagen: " A semi-distributed method for Inductor de-embedding " ICMTS 2014, pp. 141-145, Udine (Italy), 2014.


  153. A. Kuligk, B. Meinerzhagen: " On the Modeling of Coulomb Scattering in p-MOSFETs with Hafnium Based Metal Gate Stacks " Proceeding of ULIS 2014, pp. 113-116, Stockholm (Sweden), 2014.


  154. A. Bora, A. Pathak, K.-C. Liao, M.I. Vexler, A. Kuligk, A. Cattani-Scholz, B. Meinerzhagen, G. Abstreiter, J. Schwartz, M. Tornow: " Organophosphonate Monolayers on SiO2/Si Surfaces: a Model System for Studying Electronic Transport across Organic/Inorganic Interfaces " E-MRS 2014 Spring Meeting, Lille (France), 2014.


  155. S. Haddadinejad, A. Noculak, M. Hinz, B. Meinerzhagen: " A Low Power, Small Area, Fully Integrated 5.5GHz CMOS LC-VCO " PRIME 2014, Grenoble (France), 2014.


  156. J. Dang, A. Noculak, S. Haddadinejad, C. Jungemann, B. Meinerzhagen: " A fully integrated 5.5 GHz cross-coupled VCO with high output power using 0.25 µm CMOS technology " ICECS 2014, pp. 255-258, Marseille (France), 2014.


  157. J. Dang, P. Sakalas, A. Noculak, M. Hinz, B. Meinerzhagen: " A K-band High Gain, Low Noise Figure LNA using 0.13 um Logic CMOS Technology " Proceedings of the 10th EuMIC, pp. 120-123, Paris (France), 2015.





aktualisiert: 17.06.2015

Verantwortlich: Michael Hinz
Feedback an: m.hinz@tu-braunschweig.de